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Freescale Semiconductor Technical Data
MW4IC915 Rev. 5, 3/2005
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. Final Application * Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860-960 MHz) Power Gain -- 30 dB Power Added Efficiency -- 44% Driver Application * Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz) Power Gain -- 31 dB Power Added Efficiency -- 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM -- 1.5% * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power * Characterized with Series Equivalent Large-Signal Impedance Parameters * On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On-Chip Current Mirror gm Reference FET for Self Biasing Application(1) * Integrated ESD Protection * N Suffix Indicates Lead-Free Terminations * 200C Capable Plastic Package * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2 VRG2 VDS1 RFin VRD1 VRG1 VGS1 VGS2 VDS2/RFout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
860 - 960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329-09 TO-272 WB-16 PLASTIC MW4IC915NBR1(MBR1)
CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MW4IC915GNBR1(GMBR1)
GND VRD2 VRG2 VDS1 VRD1 RFin VRG1 VGS1 VGS2 NC GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout/ VDS2
13 12
NC GND
Quiescent Current Temperature Compensation
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2005. All rights reserved.
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value -0.5. +65 -0.5. +15 -65 to +175 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 15 W CW) GSM EDGE Application (Pout = 7.5 W CW) CDMA Application (Pout = 3.75 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA Symbol RJC 7.3 1.7 7.3 1.8 7.4 1.9 Value (1) Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP, f1 = 869 MHz, f2 = 869.1 MHz and f1 = 960 MHz and f2 = 960.1 MHz, Two-Tone Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL 29 29 -- -- 31 31 -40 -15 -- -- -29 -10 dB % dBc dB
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued )
Characteristic Quiescent Current Accuracy over Temperature with 1.8 k Gate Feed Resistors (-10 to 85C) (1) Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW Delay @ Pout = 3 W CW Including Output Matching Part-to-Part Phase Variation @ Pout = 3 W CW Symbol Min -- -- -- -- -- Typ Max -- -- -- -- -- Unit % dB ns Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz960 MHz IQT GF Delay 5 0.2 0.6 2.5 15
Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 3
L1 VDS1 + RF INPUT C1 Z1 R1 + C6 VGS2 R2 + C9 C8 C7 C5 C4 C2 C3 1 2 3 4 5 6 7 8 9 10 NC 11 Quiescent Current Temperature Compensation 16 NC 15 + C10 C11 C15 + C14
VDS2
14
Z2
Z3
C12 C13
Z4
M1 Z5 M2 Z6
M4 Z7 M3
Z8
C16
Z9
RF OUTPUT
VGS1
NC 13 12
Z1 Z2 Z3 Z4 Z5
0.086, 50 W Microstrip 0.133 x 0.236 Microstrip 0.435 x 0.283 Microstrip 0.171 x 0.283 Microstrip 0.429 x 0.283 Microstrip
Z6 Z7 Z8 Z9 PCB
0.157 x 0.283 Microstrip 0.429 x 0.283 Microstrip 0.394 x 0.088 Microstrip 0.181 x 0.088 Microstrip Taconic TLX8, 0.030, r = 2.55
Figure 3. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Designations and Values
Part C1, C6, C9, C14 C2, C5, C8, C11 C3, C4, C7, C10, C16 C12, C13 C15 L1 M1, M2, M3, M4 R1, R2 Description 22 mF, 35 V Tantalum Chip Capacitors 1000 pF Chip Capacitors 22 pF Chip Capacitors 10 pF Chip Capacitors 10 mF Tantalum Chip Capacitor 12.5 nH Inductor 0.283, 90_ Mitered Microstrip Bends 10 k, 1/4 W Chip Resistor (1206) Part Number TAJE226M035R 100B102JCA500X 100B220JCA500X 100B100JCA500X T491X226K035AS4394 Manufacturer AVX ATC ATC ATC Kemet
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 4 RF Device Data Freescale Semiconductor
C1
VDS1 C2 C3 C10 L1 C12 C13 C11 MW4IC915MB Rev 0
VDS2 C14 C15
C16
C5
C4 C7
C6 R1 VGS1
C8 C9 VGS2 R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Test Fixture Component Layout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 5
VDS + R1 + RF INPUT C7 Z1 C10 C9 1 2 3 4 5 6 7 8 9 10 NC 11 16 NC 15 RF OUTPUT C4 C5 C6
14
Z2
Z3
C15 C1
Z4
Z5
C2
Z6
C3
Z7
NC 13 Quiescent Current Temperature Compensation 12 R2 VGS + C8
R7 C11 C12 C16
P2
R4 R3 R6 C13 C14 C17 R5 P1
Z1 Z2 Z3 Z4
0.681 x 0.039, 50 W Microstrip 0.157 x 0.228 Microstrip 0.468 x 0.157 Microstrip 0.220 x 0.157 Microstrip
Z5 Z6 Z7 PCB
0.566 x 0.043 Microstrip 0.165 x 0.043 Microstrip 0.078 x 0.043 Microstrip Taconic RF35, 0.02, r = 3.5
Figure 5. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Schematic
Table 7. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Designations and Values
Part C1, C15 C2 C3, C4, C9, C11, C13 C5, C10, C12, C14 C6, C7, C8 C16, C17 P1, P2 R1, R2, R3, R4, R5 R6, R7 Description 10 pF Chip Capacitors (0805), ACCU-P 5.6 pF Chip Capacitor (0805), ACCU-P 33 pF Chip Capacitors (0805), ACCU-P 10 nF Chip Capacitors (0805) 22 mF, 35 V Tantalum Capacitors 100 nF Chip Capacitors (0805) 5 k Potentiometer CMS Cermet Multi-turn 0 , 1/8 W Chip Resistors (0805) 10 k, 1/4 W Chip Resistors (1206) Part Number 08051J100GBT 08051J5R6BBT 08051J330GB 08055C103KAT TAJE226MO35R 08055C104KAT 3224W Manufacturer AVX AVX AVX AVX AVX AVX Bourns
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 6 RF Device Data Freescale Semiconductor
VDD
GROUND
R1 C7 C5 C4 C15 C6
C10 C9
C2
C3
C13 C11 C14 C12 R6 C17 P1 R5 R3 C16 R4 R2 R7 P2
C1
MW4IC915MB Rev 0 C8
VGG
GROUND
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Layout
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
34 PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 32 30 28 26 24 22 20 18 16 14 860 880 900 VDD = 26 Vdc Pout = 15 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 920 940 f, FREQUENCY (MHz) PAE IRL IMD3 0 -8 -16 -24 -32 -40 -48 -56 -64 -72 -80 960
Gps
Figure 7. Two-Tone Wideband Circuit Performance @ Pout = 15 Watts PEP
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD3, INTERMODULATION DISTORTION (dB) IMD, INTERMODULATION DISTORTION (dBc) 34 0 -7 -14 IRL -21 VDD = 26 Vdc Pout = 6 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing -28 -35 -42 -49 -56 -63 880 900 920 940 -70 960 -20
32 30 28 26 24 22 20 18 16 14 860 IMD3 PAE
Gps
IRL, INPUT RETURN LOSS (dB) IMD3, INTERMODULATION DISTORTION (dBc)
3rd Order 5th Order 7th Order
-30 -40 -50 -60 -70 -80 -90 0.1 1 VDD = 26 Vdc IDQ1 = 90 mA, IDQ2 = 240 mA f = 960 MHz 100 kHz Tone Spacing 10 100 Pout, OUTPUT POWER (WATTS) Avg.
f, FREQUENCY (MHz)
Figure 8. Two-Tone Wideband Circuit Performance @ Pout = 6 Watts
Figure 9. Intermodulation Distortion Products versus Output Power
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD)
34 TC = -30_C 25_C 56 PAE, POWER ADDED EFFICIENCY (%) 48 Gps 85_C PAE 85_C 40 32 24 16 8 1 10 0 100 35 34 G ps , POWER GAIN (dB) 33 32 31 30 29 28 860 870 880 890 85_C 25_C TC = -30_C VDD = 26 Vdc Pout = 3 W CW IDQ1 = 60 mA, IDQ2 = 240 mA
G ps , POWER GAIN (dB)
33 V = 26 Vdc DD IDQ1 = 60 mA, IDQ2 = 240 mA 32 f = 910 MHz 31 30 29 28 27 0.1 25_C
-30_C
900
910
920
930
940
950
960
Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 10. Power Gain and Power Added Efficiency versus Output Power
Figure 11. Power Gain versus Frequency
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) - CONTINUED
34 33 G ps , POWER GAIN (dB) 32 31 30 29 28 860 85_C 870 880 890 900 910 920 930 940 950 960 25_C PAE, POWER ADDED EFFICIENCY (%) TC = -30_C VDD = 26 Vdc Pout = P1dB IDQ1 = 60 mA, IDQ2 = 240 mA 21
20 TC = -30_C 25_C 85_C 18 VDD = 26 Vdc Pout = 3 W CW IDQ1 = 60 mA, IDQ2 = 240 mA 870 880 890 900 910 920 930 940 950 960 f, FREQUENCY (MHz)
19
17 860
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
Figure 13. Power Added Efficiency versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
4 3.5 3 2.5 2 1.5 1 0.5 0
SPECTRAL REGROWTH @ 400 kHz (dBc)
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz TC = 85_C
-50 25_C -30_C -55 -60 -65 -70 -75 -80
25_C TC = 85_C
-30_C
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz 0.1 1 10 100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS)
Figure 14. Error Vector Magnitude versus Output Power
Figure 15. Spectral Regrowth at 400 kHz versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
-70 -72 -74 -76 -78 -80 -82 -84 -86
VDD = 26 Vdc IDQ1 = 60 mA, IDQ2 = 240 mA EDGE Modulation f = 910 MHz TC = -30_C 85_C 25_C
0.1
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 16. Spectral Regrowth at 600 kHz versus Output Power MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 9
Zo = 5 Zload f = 900 MHz f = 980 MHz
VDD = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = P1dB f MHz 900 910 920 930 940 950 960 970 980 Zload Zload 3.23 - j4.30 3.24 - j4.36 3.25 - j4.42 3.25 - j4.47 3.23 - j4.52 3.21 - j4.56 3.16 - j4.60 3.11 - j4.65 3.04 - j4.70
= Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 10 RF Device Data Freescale Semiconductor
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 11
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 12 RF Device Data Freescale Semiconductor
NOTES
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
2X
B
PIN ONE INDEX
E1
aaa
M
r1 CA B
A
NOTE 6
4X
e1 e2 D1 aaa e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
Y
ZONE "J"
F
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329-09 ISSUE J TO-272 WB-16 PLASTIC MW4IC915NBR1(MBR1)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 14 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
aaa
M
b1 CA
2X
aaa
M
r1 CAB
E1
B
A
PIN ONE INDEX
4X
aaa
M
b1 CA
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
aaa
M
aaa
M
b CA
E
DETAIL Y
DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A-03 ISSUE C TO-272 WB-16 GULL PLASTIC MW4IC915GNBR1(GMBR1)
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 RF Device Data Freescale Semiconductor 15
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
NOTE 6
How to Reach Us:
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MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
Document Number: MW4IC915 Rev. 5, 3/2005
16
RF Device Data Freescale Semiconductor

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